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MMT05B350T3
Preferred Devices
Product Preview Thyristor Surge Protectors
High Voltage Bidirectional TSPD
These Thyristor Surge Protective devices (TSPD) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. They are breakover-triggered crowbar protectors. Turn-off occurs when the surge current falls below the holding current value. Secondary protection applications for electronic telecom equipment at customer premises.
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BIDIRECTIONAL TSPD ( ) 50 AMP SURGE, 350 VOLTS
* High Surge Current Capability: 50 A 10 x 1000 msec, for Controlled * The MMT05B350T3 is used to help equipment meet various * * * * * * *
regulatory requirements including: Bellcore 1089, ITU K.20 and K.21, IEC 950, UL 1459 and 1950 and FCC Part 68 Bidirectional Protection in a Single Device Little Change of Voltage Limit with Transient Amplitude or Rate Freedom from Wearout Mechanisms Present in Non-Semiconductor Devices Fail-Safe, Shorts When Overstressed, Preventing Continued Unprotected Operation Surface Mount Technology (SMT) Indicates UL Recognized - File #E210057 Pb-Free Package is Available Temperature Environments
MT1
MT2
SMB (No Polarity) (Essentially JEDEC DO-214AA) CASE 403C
MARKING DIAGRAMS
MAXIMUM RATINGS (TJ = 25C unless otherwise noted)
Rating Off-State Voltage - Maximum Maximum Pulse Surge Short Circuit Current Non-Repetitive Double Exponential Decay Waveform (-25C Initial Temperature) (Notes 1 and 2) 2 x 10 msec 8 x 20 msec 10 x 160 msec 10 x 360 msec 10 x 560 msec 10 x 700 msec 10 x 1000 msec Non-Repetitive Peak On-State Current 60 Hz Full Sign Wave Maximum Non-Repetitive Rate of Change of On-State Current Exponential Waveform, < 100 A Symbol VDM Value 300 Unit V A(pk)
AYWW RPBM G G
IPPS1 IPPS2 IPPS3 IPPS4 IPPS5 IPPS6 IPPS7 ITSM di/dt
150 150 100 100 70 70 50 32 "300 A(pk) A/ms
A = Assembly Location Y = Year WW = Work Week RPBM = Specific Device Code G = Pb-Free Package (Note: Microdot may be in either location)
ORDERING INFORMATION
Device MMT05B350T3 MMT05B350T3G Package SMB SMB (Pb-Free) Shipping 12 mm Tape & Reel (2.5 K/Reel) 12 mm Tape & Reel (2.5 K/Reel)
Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. Allow cooling before testing second polarity. 2. Measured under pulse conditions to reduce heating.
This document contains information on a product under development. ON Semiconductor reserves the right to change or discontinue this product without notice.
(c) Semiconductor Components Industries, LLC, 2006
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D.
Preferred devices are recommended choices for future use and best overall value.
1
May, 2006 - Rev. 2
Publication Order Number: MMT05B350T3/D
MMT05B350T3
THERMAL CHARACTERISTICS
Characteristic Operating Temperature Range Blocking or Conducting State Overload Junction Temperature - Maximum Conducting State Only Maximum Lead Temperature for Soldering Purposes 1/8 from Case for 10 Seconds Symbol TJ1 TJ2 TL Max -40 to + 125 + 175 260 Unit C C C
ELECTRICAL CHARACTERISTICS (TJ = 25C unless otherwise noted)
Devices are bidirectional. All electrical parameters apply to forward and reverse polarities. Characteristics Breakover Voltage (Both polarities) (dv/dt = 100 V/ms, ISC = 1.0 A, Vdc = 1000 V) (+65C) Breakover Voltage (Both polarities) (f = 60 Hz, ISC = 1.0 A(rms), VOC = 1000 V(rms), RI = 1.0 kW, t = 0.5 cycle) (Note 3) (+65C) Breakover Voltage Temperature Coefficient Breakdown Voltage (I(BR) = 1.0 mA) Both polarities Off State Current (VD1 = 50 V) Both polarities Off State Current (VD2 = VDM) Both polarities On-State Voltage (IT = 1.0 A) (PW 300 ms, Duty Cycle 2%) (Note 3) Breakover Current (f = 60 Hz, VDM = 1000 V(rms), RS = 1.0 kW) Both polarities Holding Current (Both polarities) VS = 500 V; IT (Initiating Current) = "1.0 A Critical Rate of Rise of Off-State Voltage (Linear waveform, VD = Rated VBR, TJ = 25C) Capacitance (f = 1.0 MHz, 50 Vdc, 1.0 V rms Signal) Capacitance (f = 1.0 MHz, 2.0 Vdc, 1.0 V rms Signal) 3. Measured under pulse conditions to reduce heating. (Note 3) (+65C) Symbol V(BO) - - V(BO) - - dV(BO)/dTJ V(BR) ID1 ID2 VT IBO IH dv/dt CO - - - - - - 150 130 2000 - - - - 0.12 350 - - 1.6 475 270 - - 14 27 400 412 - - 2.0 5.0 3.0 - - - - 18 30 V/C V mA V mA mA V/ms pF - - 400 412 V Min Typ Max Unit V
Voltage Current Characteristic of TSPD (Bidirectional Device)
+ Current
Symbol
ID1, ID2 VD1, VD2 VBR VBO IBO IH VTM
Parameter
Off State Leakage Current Off State Blocking Voltage Breakdown Voltage Breakover Voltage Breakover Current Holding Current On State Voltage + Voltage VD1 VD2 V(BR) IH ID1 ID2 I(BO) VTM V(BO)
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MMT05B350T3
VBR, BREAKDOWN VOLTAGE (VOLTS) 0 20 40 60 80 TEMPERATURE (C) 100 120 140 100 ID1, OFF-STATE CURRENT (mA) VD1 = 50V 10 400 390 380 370 360 350 340 330 320 -60 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120 140
1.0
0.1
0.01
0.001 -60 -40 -20
Figure 1. Typical Off-State Current versus Temperature
Figure 2. Typical Breakdown Voltage versus Temperature
VBO, BREAKOVER VOLTAGE (VOLTS)
440 430 420 410 400 390 380 -60 -40 -20
600 550 IH, Holding Current (mA) 0 20 40 60 80 TEMPERATURE (C) 100 120 140 500 450 400 350 300 250 200 150 100 -40 -20 0 20 40 60 80 TEMPERATURE (C) 100 120
Figure 3. Maximum Breakover Voltage versus Temperature
420 Peak Value tr = rise time to peak value tf = decay time to half value CURRENT (A) 400 380 360 340 320 300 280 260 240 0 0 tr tf TIME (ms) 220 10
Figure 4. Typical Holding Current versus Temperature
IPP - PEAK PULSE CURRENT - %IPP
100
50
Half Value
100 TIME (sec)
1000
100000
Figure 5. Exponential Decay Pulse Waveform
Figure 6. Peak Surge On-State Current versus Surge Current Duration, Sinusoidal Waveform
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3
MMT05B350T3
TIP
OUTSIDE PLANT
GND
TELECOM EQUIPMENT
RING
PPTC*
TIP
OUTSIDE PLANT
GND
TELECOM EQUIPMENT
RING
PPTC* *Polymeric PTC (positive temperature coefficient) overcurrent protection device
HEAT COIL
TIP
OUTSIDE PLANT
GND
TELECOM EQUIPMENT
RING HEAT COIL
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4
MMT05B350T3
PACKAGE DIMENSIONS
SMB CASE 403C-01 ISSUE A
S A
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES DIM MIN MAX A 0.160 0.180 B 0.130 0.150 C 0.075 0.095 D 0.077 0.083 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.205 0.220 MILLIMETERS MIN MAX 4.06 4.57 3.30 3.81 1.90 2.41 1.96 2.11 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 5.21 5.59
D
B
C
K
P
J
H
SOLDERING FOOTPRINT*
2.261 0.089
2.743 0.108
2.159 0.085
SCALE 8:1 mm inches
*For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D.
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.
PUBLICATION ORDERING INFORMATION
LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5773-3850 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative
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MMT05B350T3/D

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